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| 2SK2007 Silicon N Channel MOS FET Application High speed power switching TO-3P Features * * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control 2 1 1 2 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 20 80 20 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2007 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A VGS = 10 V * ID = 10 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 3 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.12 10 250 3.0 0.15 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 9.0 14 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 2340 1000 160 30 125 190 100 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 120 -- ns -------------------------------------------------------------------------------------- 2SK2007 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 30 1 10 0 10 s s Drain Current I D (A) PW m s 100 10 3 1 0.3 = O pe ra tio n (T Operation in this c = area is limited 25 C by R DS (on) ) D C 10 s m (1 o sh t) 50 Ta = 25C 0.1 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (C) Drain to Source Voltage V DS (V) Typical Output Characteristics 50 40 30 20 10 VGS = 4 V 0 4 8 12 16 20 0 10 V 8V 50 Pulse Test Drain Current I D ( A ) 6V 40 30 20 10 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current I D (A) 5.5 V 5V -25C Tc = 25C 75C 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 2SK2007 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS (on) (V) 5 4 3 2 1 20 A 10 A ID = 5 A Pulse Test Static Drain to Source On State Resistance R DS (on) ( ) 5 2 1 0.5 Static Drain to Source On State Resistance vs. Drain Current Pulse Test VGS = 10 V 0.2 0.1 15 V 0.05 1 2 5 10 20 50 100 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source On State Resistance vs. Temperature 0.5 Static Drain to Source On State Resistance R DS (on) ( ) 0.4 0.3 I D = 20 A 0.2 0.1 0 -40 5A 10 A VGS = 10V Pulse Test Forward Transfer Admittance | yfs | (S) 100 Forward Transfer Admittance vs. Drain Current -25C 30 10 3 1 0.3 0.1 0.1 75C V DS = 10 V Pulse Test Tc = 25C 0 40 80 120 160 0.3 1 3 10 30 100 Case Temperature Tc (C) Drain Current I D (A) 2SK2007 Body - Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 100 50 20 10 5 0.5 1 1 2 5 10 20 50 0 di/dt = 100 A/s VGS = 0, Ta = 25C 10000 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Ciss 1000 Coss 100 VGS = 0 f = 1 MHz 10 20 Crss 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) I D = 20 A 400 300 200 100 0 0 20 40 60 80 Gate Charge Qg (nc) VDS VDD = 200 V 100 V 50 V VDD = 50 V 100 V 200 V VGS 16 12 8 4 0 100 20 Gate to Source Voltage VGS (V) Switching Time t (ns) Switching Characteristics 500 200 100 50 20 10 5 0.5 tr t d (on) t d (off) tf : VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1% = 1 2 5 10 20 50 Drain Current I D (A) |
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